Session and scheduling information are listed below. Select a session from the list and press "Go" to view the abstracts for that session.

Session K:
Keynote Address & Focus Presentations

Tuesday / 8:15 AM - 9:45 AM

Chair:
Marion Reine, Consultant, Infarred Detectors, Lexington, MA

• 0.1 - Keynote Paper: The Navy EO/IR Technology Roadmap (8:15 AM - 8:45 AM)

  Keith Lannan
  Naval Surface Warfare Center, Crane, IN
  

• 0.2 - Focus Paper: HgCdTe: Recent Trends in the Ultimate IR Semiconductor (8:45 AM - 9:15 AM)

  Mike Kinch
  DRS RSTA, Inc., Dallas, TX
  

• 0.3 - Focus Paper: DARPA's Vision of IR Technology (9:15 AM - 9:45 AM)

  Stuart Horn
  DARPA/MTO, Arlington, DC
  

Session 1:
Devices I

Tuesday / 9:45 AM - 10:30 AM

Chair:
Scott Johnson, Raytheon Vision Systems, Goleta, CA

• 1.1 - HgCdTe Growth on 6 cm x 6 cm CdZnTe Substrates for Large Format Dual-Band Infrared Focal Plane Arrays (9:45 AM - 10:00 AM)

  M. Reddy, J. M. Peterson, D. D. Lofgreen, T. Vang, E.A. Patten, W. A. Radford, S. M. Johnson
  Raytheon Vision Systems, Goleta, CA, USA
  

• 1.2 - An Accurate Numerical Simulation of Temperature Dependences of Dark Currents in HgCdTe Infrared Detector Assisted by Analytical Modeling (10:00 AM - 10:15 AM)

  W.D. Hu, X.S. Chen, Z.H. Ye, F. Yin, L. Chun, X.N. Hu, Z.F. Li, W. Lu
  Shanghai Institute of Technical Physics, Shanghai, China
  

• 1.3 - Analysis of Current versus Voltage Measurements on Long Wavelength HgCdTe Photodiodes Fabricated on Si Composite Substrates (10:15 AM - 10:30 AM)

  P. Wijewarnasuriya, Y. Chen, G. Brill, N. Dhar
  U.S. Army Research Laboratory, Adelphi, MD, USA
  
  D. Edwall
  Teledyne Scientific & Imaging, Camarillo, CA, USA
  

Break Tuesday / 10:30 AM - 10:45 AM

Session 1:
Devices I (cont.)

Tuesday / 10:45 AM - 11:45 AM

Chair:
Scott Johnson, Raytheon Vision Systems, Goleta, CA

• 1.1 - Invited Paper: HgCdTe APDs (10:45 AM - 11:15 AM)

  M. Jack
  Raytheon Vision Systems, Golta, CA, USA
  

• 1.2 - Full-Band Monte Carlo Simulation of HgCdTe APDs (11:15 AM - 11:30 AM)

  M. Moresco, M. Penna, F. Bertazzi, E. Bellotti
  Department of Electrical and Computer Engineering, Boston University, Boston, MA, USA
  
  M. Goano
  Dipartimento di Elettronica, Politecnico di Torino, Torino, Italy
  

• 1.3 - Minority Carrier Drift-Velocity, Diffusion Coefficient and Lifetime Shockley-Haynes Characterization in HgCdTe Avalanche Photodiodes (11:30 AM - 11:45 AM)

  J. Rothman, G. Vaujetta, B. Moselle, L. Mollard, S. Gout, J.-P. Chamonal
  CEA/LETI/DOPT, Grenoble Cedex 9, France
  

Lunch Tuesday / 11:45 AM - 1:15 PM

Session 2:
Dopants & Defects

Tuesday / 1:15 PM - 2:15 PM

Chair:
Lynette Brown, Air Force Research Laboratory, Wright Patterson AFB, OH

• 2.1 - Surface Voids and Their Crystallographic Formation Mechanisms on HgCdTe (211)B Alloys and Related Superlattices (1:15 PM - 1:30 PM)

  Y. Chang, C. R. Becker, X. J. Wang, C. H. Grein, S. Sivananthan
  Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, IL, USA
  
  J. Zhao, S. Velicu, M. Carmody
  EPIR Technologies Inc, Bolingbrook, IL, USA
  
  V. Nathan
  Air Force Laboratory, Kirtland AFB, NM, USA
  

• 2.2 - Arsenic Diffusion Study in HgCdTe for Low P-Type Doping in Auger-Suppressed Photodiodes (1:30 PM - 1:45 PM)

  A. M. Itsuno, P. Y. Emelie, J. D. Phillips
  EECS Department, The University of Michigan, Ann Arbor, MI, USA
  
  S. Velicu, C. H. Grein
  EPIR Technologies, Bolingbrook, IL, USA
  
  P. S. Wijewarnasuriya
  US Army Research Laboratory, Adelphi, MD, USA
  

• 2.3 - Defects and diffusion in As-implanted HgCdTe (1:45 PM - 2:00 PM)

  L. Mollard, N. Baier, G. Destefanis, J. Rothman, P. Ballet, J. P. Chamonal, J. P. Zanatta, M. Tchagaspanian, A. M. Papon, J. P. Barnes
  CEA-LETI-MINATEC, Cedex 9, France
  
  C. Pautet, P. Fougeres
  SOFRADIR, Chatenay-Malabry, France
  

• 2.4 - First-principle Study on Coupling between Arsenic In-suit Impurities and Mercury Vacancies in HgCdTe (2:00 PM - 2:15 PM)

  Y. Huang, X. S. Chen, X.H. Zhou, W. D. Hu, W. Lu
  National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
  

Session 3:
Solar Cells

Tuesday / 2:15 PM - 3:45 PM

Chair:
Nibir Dhar, DARPA/MTO, Arlington, VA

• 3.1 - Invited Paper: Polycrystalline Thin Film Solar Cells (2:15 PM - 2:45 PM)

  B. McCandless
  University of Delaware, Newark, DE, USA
  

• 3.2 - The Optimization of Thin CdS Films Grown by Chemical Bath Deposition (2:45 PM - 3:00 PM)

  C. Lennon, P. Bechmann, T. Biegala, D. Xu
  EPIR Technologies, Inc., Bolingbrook, IL, USA
  

• 3.3 - Carrier Generation and Recombination Processes in ZnTeO for Intermediate Band Solar Cells (3:00 PM - 3:15 PM)

  W. Wang, A. Lin, J. Phillips
  The University of Michigan, Ann Arbor, MI, USA
  
  W. Metzger
  National Renewable Energy Laboratory, Golden, CO, USA
  

• 3.4 - SIMS Study of CdTe Based Solar Cell (3:15 PM - 3:30 PM)

  L. Wang, A. Wang
  Evans Analytical Group, Sunnyvale, CA, USA
  

• 3.5 - Optimization of the Thicknesses of CdS and CdTe Layers and CdTe Deposition Temperature for CdS/CdTe Solar Cells (3:30 PM - 3:45 PM)

  S. R. Hahn, M. A. K. L. Dissanayake, R. F. Klie, S. Fahey, S. Sivananthan
  Microphyiscs Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, IL, USA
  
  R. Kodama
  EPIR Technologies, Bolingbrook, IL, USA
  

Break Tuesday / 3:45 PM - 4:00 PM

Session 4:
Gamma Detectors

Tuesday / 4:00 PM - 6:15 PM

Chair:
Ralph James, Brookhaven National Laboratory, Upton, NY

• 4.1 - Invited Paper: CdTe and CdZnTe Pixel Detectors: Material Characterization, Technology and Device Performance (4:00 PM - 4:30 PM)

  M. Fiederle
  Freiburd Materials Reseaerch Center, Albert-Ludwigs-Universitat, Freiburg, Germany
  

• 4.2 - Invited Paper: Crystal Growth and Characterization of CdZnTe for X-Ray and Gamma Ray Detectors (4:30 PM - 5:00 PM)

  W. Jie
  Northwestern Polytechnical University, Xi'an, China
  

• 4.3 - Point Defect Characterization in CdZnTe and CdMnTe Room-Temperature Radiation Detectors Using Current Deep Level Transient Spectroscopy (5:00 PM - 5:15 PM)

  R. Gul, K. Keeter, K. Keeter
  Idaho State University, Pocatello, ID, USA
  
  Z. Li, A. Bolotnikov, A. Hossain, R.B. James
  Brookhaven National Laboratory, Upton, NY, USA
  

• 4.4 - Characterization of Indium-doped CdMnTe Crystals for Room-Temperature Radiation Detection (5:15 PM - 5:30 PM)

  A. Hossain, A. E. Bolotnikov, G. S. Camarda, Y. Cui, G. Yang, K-H. Kim, R. Gul, L. Lee, R. B. James
  Brookhaven National Laboratory, Upton, NY, USA
  

• 4.5 - Effective Surface Passivation in CdMnTe Materials (5:30 PM - 5:45 PM)

  K-H Kim, A. E. Bolotnikov, A. Hossain, G. Camarda, G. Yang, R. Gul, Y. Cui, R. B. James
  Brookhaven National Laboratory, Upton, NY, USA
  

• 4.6 - Investigation of Effects of Selective Surface Modification of CdZnTe Crystals on Detector Performance (5:45 PM - 6:00 PM)

  A. Washington, L. Teague, M. Duff
  Savannah River National Laboratory, Aiken, SC, USA
  
  A. Burger, M. Groza, V. Buliga
  Fisk University, Nashville, TN, USA
  

• 4.7 - Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor Phase Epitaxy (6:00 PM - 6:15 PM)

  K. Yasuda, M. Oka, T. Yoneyama, H. Nakashima, T. Nakanishi, K. Matsumoto, D. Katoh, Y. Agata
  Nagoya Institute of Technology, Graduate School Engineering, Nagoya, Japan
  

Session 5:
Alternative Substrates I

Wednesday / 8:00 AM - 10:00 AM

Chair:
Tony Almeida, US Army NVESD, Fort Belvoir, VA

• 5.1 - Alternative Substrates for Lead Chalcogenide Epilayers for Infrared Focal Plane Arrays (8:00 AM - 8:15 AM)

  F. Aquariden, P.D. Dreiske, S. Rafol
  EPIR Technolgies, Inc., Bolingbrook, IL, USA
  
  P.S. Wijewarnasuriya
  Army Research Laboratory, Adelphi, MD, USA
  

• 5.2 - Studies on Defects in MBE Grown Lead Selenide Epilayers (8:15 AM - 8:30 AM)

  J. Ma, F. Zhao, D. Li, S. Mukherjee, Z. Shi
  School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK
  
  M. E. Curtis, J. C. Keay, M.B. Johnson, M. A. Zurbuchen
  Homer L. Dodge Dept. of Physics and Astronomy, University of Oklahoma, Norman, OK
  

• 5.3 - Invited Paper: Design Considerations for Composite Substrates for HgCdTe Epitaxy (8:30 AM - 9:00 AM)

  E. Fitzgerald
  MIT, Cambridge, MA, USA
  

• 5.4 - Metalorganic Vapor Phase Epitaxial Growth of (211)B CdTe on (211) Si Substrates Using Ge and ZnTe Interfacial Layers (9:00 AM - 9:15 AM)

  S. Rao, S. Shintri
  Electrical, Computer & Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY, USA
  
  I. Bhat
  Electrical, Computer & Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY, USA
  
  R. Jacobs
  US Army NVESD, Fort Belvoir, VA, USA
  

• 5.5 - Characterization of Dislocations in (112)B HgCdTe/CdTe/Si (9:15 AM - 9:30 AM)

  J.D. Benson, L.O. Bubulac, R.N. Jacobs, J.K. Markunas, M. Jaime-Vasquez, L.A. Almeida, A. Stoltz
  U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate
  
  P.S. Wijewarnasuriya, G. Brill, Y. Chen, U. Lee
  U.S. Army Research Laboratory
  
  M.F. Vilela, J. Peterson, S.M. Johnson, D.D. Lofgreen, D. Rhinger, E.A. Patten, P.M. Goetz
  Raytheon Vision Systems
  

• 5.6 - Feasibility of Localized Substrate Thinning for Reduced Dislocation Density in CdTe/Si Heterostructures (9:30 AM - 9:45 AM)

  R. N. Jacobs, P. J. Smith, J. K. Markunas, J. D. Benson, J. Pellegrino
  U. S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA
  

• 5.7 - Dislocation Reduction of HgCdTe/Si through ex-situ Annealing (9:45 AM - 10:00 AM)

  G. Brill, Y.P. Chen, P.S. Wijewarnasuriya
  U.S. Army Research Laboratory, Adelphi, MD, USA
  
  S. Farrell, M. Rao
  George Mason University, Fairfax, VA, USA
  
  J.D. Benson
  U.S. Army RDECOM, CERDEC, Fort Belvoir, VA, USA
  

Break Wednesday / 10:00 AM - 10:15 AM

Session 6:
Devices II

Wednesday / 10:15 AM - 11:45 AM

Chair:
Priyalal Wijewarnasuriya, U.S. Army Research Laboratory, Adelphi, MD

• 6.1 - Invited Paper: Device Physics Modeling of IR Detectors - A Physics, Mathematical, and Computational Problem (10:15 AM - 10:45 AM)

  T. Casselman
  EPIR Technologies, Bolingbrook, IL, USA
  

• 6.2 - 3D Numerical Analysis of HgCdTe Planar Pixel Arrays (10:45 AM - 11:00 AM)

  M. Moresco, A. Zononi, D. D'Orsogna, E. Bellotti
  Department of Electrical and Computer Engineering, Boston University, Boston, MA, USA
  
  P. Lamarre
  Photonix Inc., Burlington, MA, USA
  

• 6.3 - VLWIR HgCdTe Interdigitated Pixel Monte Carlo Response Modeling (11:00 AM - 11:15 AM)

  A.I. D'Souza
  DRS technologies, California Division, Cypress, CA, USA
  
  M.G. Stapelbroek
  University of Arizona, AZ, USA
  
  P.S. Wijewarnasuriya
  U.S. Army Research Laboratory, Adelphi, MD, USA
  

• 6.4 - Type III HgTe/CdTe Superlattices for Very Long Wavelength Infrared Detectors (11:15 AM - 11:30 AM)

  M. Carmody, J. Zhao, C. Grein, J. Garland, R. Kodama, R. Mallick
  EPIR Technologies Inc., Bolingbrook, IL, USA
  

• 6.5 - 2-Dimensional LW- and VLW-IR FPAs at AIM (11:30 AM - 11:45 AM)

  J. Wenisch, D. Eich, S. Hanna, A. Bauer, H. Bitterlich, M. Bruder, K.-M. Mahlein, H. Lutz, R. Wollrab, J. Ziegler
  AIM Infrarot-Module GmbH, Heilbronn, Germany
  

Lunch Wednesday / 11:45 AM - 1:15 PM

Session 7:
Wide Gap

Wednesday / 1:15 PM - 3:45 PM

Chair:
Ishwara Bhat, Rensselaer Polytechnic Institute, Troy, NY

• 7.1 - Invited Paper: MBE-grown II-VI Nanostructures (1:15 PM - 1:45 PM)

  I.K. Sou, S.K. Lok, G. Wang, G.K.L. Wong
  The Hong Kong University of Science and Technology, Hong Kong, China
  

• 7.2 - Nonvolatile Memories using Quantum Dot (QD) Floating Gate Assembled on II-VI Tunnel Insulator (1:45 PM - 2:00 PM)

  E. Suarez, M. Gogna, F. Al-Amoody, S. Karmakar, J. Ayers, F. Jain
  Electrical and Computer Engineering Department, University of Connecticut, Storrs, CT, USA
  
  E. Heller
  RSoft Design Group, Ossining, NY, USA
  

• 7.3 - MOCVD of ZnO Field Effect Transistors (2:00 PM - 2:15 PM)

  B. Willner, S. Sun, G. Tompa
  Structured Materials Industries, Inc., Piscataway, NJ, USA
  

• 7.4 - Electronic and Optical Properties of ZnO/Mg(x)Zn(1-x)O and ZnO/Be(x)Zn(1-x)O Quantum Wells (2:15 PM - 2:30 PM)

  E. Furno, S. Chiaria, M. Penna, M. Goano
  Dipartimento di Elettronica, Politecnico di Torino, Torino, Italy
  
  E. Bellotti
  ECE Department, Boston University, Boston, MA, USA
  

• 7.5 - Numerical Simulation of ZnO-Based Terahertz Quantum Cascade Lasers (2:30 PM - 2:45 PM)

  E. Belloti, R. Paiella
  Department of Electrical and Computer Engineering, Boston University, Boston, MA
  

• 7.6 - X-ray Diffraction Studies of ZnMgTe/ZnTe Layered Structures and ZnTe/Si Structures (2:45 PM - 3:00 PM)

  M. Kobayashi, S. Imada, T. Baba, S. Sakurasawa
  Waseda Univ. Dept. of Elec. Eng. & Biosci., Lab for Mat. Sci. & Tech, Tokyo, Japan
  

• 7.7 - E-beam Pumped Lasers Based on II-VI Compound Nanostructures from the Visible to UVA (3:00 PM - 3:15 PM)

  M.D. Tiberi
  Principia Light Works, Inc., CA, USA
  
  V.I. Kuznetsov
  P.N. Lebedev Physical Institute, 119991 Moscow, Russian Fed.
  
  P.I. Kuznetsov
  Kotel'nikov Institute of Radio Engineering and Electronics, 141120 Fryzino, Russian Fed.
  

• 7.8 - Self-Assembled CdTe Quantum Dots Grown on ZnTe/GaSb (3:15 PM - 3:30 PM)

  R.E. Pimpinella, X. Liu, J. K. Furdyna, M. Dobrowolska
  Department of Physics, University of Notre Dame, Notre Dame, IN, USA
  
  A. M. Mintairov, J. L. Merz
  Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA
  

• 7.9 - MBE-grown Ni2Se3/ZnSe Heterostructured Nanowires (3:30 PM - 3:45 PM)

  G. Wang, S.K. Lok, I.K. Sou
  The Hong Kong University of Science and Technology, Hong Kong, China
  

Break Wednesday / 3:45 PM - 4:00 PM

Session 8:
Type-II Strained Layer Superlattices

Wednesday / 4:00 PM - 6:15 PM

Chair:
William Clark, U.S. Army Research Office, Durham, NC

• 8.1 - Invited Paper: Theory and Modeling of Type II Strained Layer Superlattice Detectors (4:00 PM - 4:30 PM)

  M. Flatte
  University of Iowa, Iowa City, IA
  

• 8.2 - Impact Ionization in Infrared Superlattices (4:30 PM - 4:45 PM)

  C. H. Grein
  EPIR Technologies, Inc., Bolingbrook, IL, USA
  

• 8.3 - Invited Paper: Antimonide Superlattices: Physics, Technology and Challenges (4:45 PM - 5:15 PM)

  M. Walther, R. Rehm, J. Schmitz, J. Fleissner, F. Rutz
  Fraunhofer-Institut fur Angewandte Festkorperphysik (IAF), Freiburg, Germany
  
  R. Scheibner, J. Wendler, J. Ziegler
  AIM Infrarot-Module GmbH, Heilbronn, Germany
  

• 8.4 - LWIR Strained Layer Superlattice Materials and Devices at Teledyne Imaging Sensors (5:15 PM - 5:30 PM)

  A. Hood, A. Ikhlassi, D. Lee, W. Tennant
  Teledyne Imaging Sensors, Camarillo, CA
  
  A. Evans
  Teledyne Imaging sensors, Camarillo, CA
  

• 8.5 - Investigation of the Diffusion Behavior of Zn for the Fabrication of Planar P on n GaSb Based Type II Superlattice Detectors (5:30 PM - 5:45 PM)

  H. Vydyanath
  Avyd Devices, Inc., Costa Mesa, CA, USA
  
  S. Trivedi
  Brimrose Corporation, Baltimore, MD, USA
  
  P. Wijewarnasuriya
  US Army Research Laboratories, Adelphi, MD, USA
  
  D. Rhiger
  Raytheon Vision System, Goleta, CA, USA
  

• 8.6 - Magneto-Transport in InAs/InSb-GaSb Type-II Superlattice (5:45 PM - 6:00 PM)

  J. Antoszewski, B. Naran, G. Umana-Membreno, L. Faraone
  School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, Australia
  
  A. Khoshakhlagh, J.-B. Rodriguez, E. Plis, S. Krishina
  Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM, USA
  
  S.J. Lee, S.K. Noh
  Quantum Dot Technology Laboratory, Korea Research Institute of Standards and Science, Daedeok Science Town, Daejeon, South Korea
  

• 8.7 - Radiation Damage in Type-II Superlattice Infrared Detectors (6:00 PM - 6:15 PM)

  E. M. Jackson, E. H. Aifer, C. L. Canedy, J. Nolde, C. D. Cress, B. D. Weaver, I. Vurgaftman, J. Vurgaftman, J. H. Warner, J. R. Meyer, J. G. Tischler
  Naval Research Laboratory, Washington , DC, USA
  

Session 9:
Late-News

Wednesday / 6:15 PM - 6:45 PM

Chair:
Marion Reine, Consultant, Infarred Detectors, Lexington, MA

• 9.1 - Photoluminescence Studies of HgCdTe Epilayers (6:15 PM - 6:30 PM)

  I. C. Robin, R. Derone, P. Ballet
  CEA-LETI, Minatec, Cedex 9, France
  
  A. Lusson
  GEMaC, CNRS, UVSQ, Meudon, France
  

• 9.2 - Effect of Hydrogen Free Radicals on Hg(1-x)Cd(x)Te

  J. Wilks, C. Tavakoli, J. Kelber
  University of North Texas, Denton, TX, USA
  

Session 10:
Processing

Thursday / 8:00 AM - 9:00 AM

Chair:
Jose Arias, RAND / Army NVESD, Simi Valley, CA

• 10.1 - Achieving Manufacturing Readiness for 6-in HgCdTe on Silicon (8:00 AM - 8:15 AM)

  L. A. Paden, J. W. Bangs, R. M. Emerson, R. A. Cureghian
  Raytheon Vision Systems, Goleta, CA, USA
  

• 10.2 - Studying Sidewall Effects for HgCdTe Photoconductors with MBE Grown CdTe (8:15 AM - 8:30 AM)

  J. Zhang, G.K.O. Tsen, J. Antoszewski, J.M. Dell, L. Faraone
  The University of Western Australia, Crawley, Australia
  

• 10.3 - Effects of HgCdTe on the Optical Emission of Inductively Coupled Plasmas (8:30 AM - 8:45 AM)

  A. J. Stoltz, J. D. Benson, P. J. Smith
  U. S. Army NVESD, Fort Belvoir, VA, USA
  

• 10.4 - Low Roughness Plasma Etching for HgCdTe Material Masked with Silicon Dioxide (8:45 AM - 9:00 AM)

  Z.H Ye, W.H. Zhou, W.D. Hu, W.T. Yin, J. Huang, X.N. Hu, R,J. Ding, X.S. Chen, W. Lu, I. He
  Shanghai Institute of Technical Physics, China
  

Session 11:
CdZnTe Substrates

Thursday / 9:00 AM - 10:15 AM

Chair:
Herbert Schaake, DRS RSTA, Inc., Dallas, TX

• 11.1 - Invited Paper: Crystal Growth of Large CdZnTe Ingots using Modified Horizontal Bridgman Technique (9:00 AM - 9:30 AM)

  P. K. Liao
  DRS Technologies, a Finmeccanica Company, Dallas, TX, USA
  

• 11.2 - Purification of (CdZn)Te Single Crystals (9:30 AM - 9:45 AM)

  E. Belas, R. Grill, R. Fresh, J. Franc, P. Hoschl
  Institute of Physics, Charles University, Parague, Czech Rep
  

• 11.3 - Polishing of CdZnTe Substrates for Molecular Beam Epitaxy Growth of HgCdTe (9:45 AM - 10:00 AM)

  F. Aqariden, J. Fletcher, K. Nissanka, S. Rafol
  EPIR Technolgies, Inc., Bolingbrook, IL, USA
  
  P.S. Wijewarnasuriya
  Army Research Laboratory, Adelphi, MD, USA
  

• 11.4 - Chemical Polishing of CdTe and CdZnTe in Iodine-Containing Etching Solutions (10:00 AM - 10:15 AM)

  V.G. Ivanits'ka, L.P. Shcherbak
  Chernivtsi National University, Chernivtsi, Ukraine
  
  P. Moravec, J. Franc, K. Masek, P. Hoschul, J. Ulrych
  Charles University, Prague, Czech Rep
  
  V.M. Tomashik
  Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine
  

Break Thursday / 10:15 AM - 10:30 AM

Session 12:
Characterization

Thursday / 10:30 AM - 12:00 PM

Chair:
Honnavalli Vydyanath, Avyd Devices, Inc., Costa Mesa, CA

• 12.1 - Invited Paper: Optical Transitions in HgCdTe (10:30 AM - 11:00 AM)

  J. Chu
  Shanghai Institute of Technical Physics/CAS and SIST/ECNU, Shanghai, China
  

• 12.2 - A Newly Developed SIMS Technique for Revealing Defects in HgCdTe (11:00 AM - 11:15 AM)

  L. O. Bublac, J. D. Benson, A. Stoltz, R. Jacobs, M. Jaime-Vasquez
  U. S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA
  
  R. Helmer
  Amethyst Research Inc., Ardmore, OK, USA
  
  A. Wang, L. Wang
  Evans Analytical Group, Sunnyvale, CA, USA
  

• 12.3 - Extraction of Transport Properties of Individual Carriers in Multicarrier HgCdTe Systems (11:15 AM - 11:30 AM)

  J. Antoszewski, H. Kala, G. Umana-Membreno, L. Faraone
  The University of Western Australia, Crawley , Australia
  

• 12.4 - TEM Characterization of CdTe/HgCdTe Surface Passivation Layers (11:30 AM - 11:45 AM)

  W. F. Zhao, D. J. Smith
  Arizona State University, Tempe, AZ, USA
  
  J. Cook, T. Parodos, S. Tobin
  BAE Systems, Lexington, MA, USA
  

• 12.5 - Wafer Mapping Using Deuterium Enhanced Defect Characterization (11:45 AM - 12:00 PM)

  K. Hossain, O.W. Holland, R. Hellmer, T.D. Golding
  Amethyst Research, Inc., Ardmore, OK, USA
  

Lunch Thursday / 12:00 PM - 1:30 PM

Session 13:
Alternative Substrates II

Thursday / 1:30 PM - 3:15 PM

Chair:
Thomas Myers, Texas State University, San Marcos, TX

• 13.1 - MOCVD Growth of (331)CdTe Epilayer on (211)Si Substrates (1:30 PM - 1:45 PM)

  J-S Kim, S-H Suh
  Department of Thin-film materials research center, Korea Institute of Science and Technology (KIST), Seoul, South Korea
  
  K-C Kim, H-J Kim
  Department of Electrical and Electronics Engineering, Yonsei University, Seoul, South Korea
  
  M. Carmody, S. Sivananthan
  EPIR Technologies 590 Territorial Drive, Bolingbrook, IL, USA
  

• 13.2 - Crystal Uniformity in Molecular Beam Epitaxy Growth of HgCdTe/CdTe/Si (1:45 PM - 2:00 PM)

  R. Kodama, D. Lim, J. Margeetis, J. Zhao, M. Carmody
  EPIR Technologies Inc., Bolingbrook, IL, USA
  

• 13.3 - Evaluation of the Surface Cleaning of Si(112) for Molecular Beam Epitaxy (2:00 PM - 2:15 PM)

  M. Jaime-Vasquez, R. N. Jacobs, J. D. Benson, A. J. Stoltz, L. A. Almeida, L. O. Bublac
  U. S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA
  
  Y. Chen
  U.S. Army Research Laboratory, Adelphi, MD, USA
  
  G. Brill
  U. S. Army Research Laboratory, Adelphi, MD, USA
  

• 13.4 - Simulations of Dislocations in CdZnTe/SL/Si Substrates (2:15 PM - 2:30 PM)

  A. Ciani, P. Chung
  Army Research Laboratory, Aberdeen Proving Ground, MD
  

• 13.5 - Molecular Beam Epitaxy Growth Modeling of CdTe/Si and InGaN Quantum Dots (2:30 PM - 2:45 PM)

  Z. Zhang, A. Chatterjee, C. Grein
  EPIR Technologies Inc., Bolingbrook, IL
  
  P. Chung
  U.S. Army Research Laboratory, Aberdeen Proving Ground, MD
  

• 13.6 - A Physical Mechanism for Dislocation Activation in HgCdTe/CdTe/Si (211) (2:45 PM - 3:00 PM)

  L. O. Bublac, J. D. Benson, R. N. Jacobs, M. Jaime-Vasquez, L. A. Almeida, A. Stoltz
  U. S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA
  
  A. Wang, R. Hellmer
  Evans Analytical Group, Sunnyvale, CA, USA
  

• 13.7 - MBE Growth and Transfer of HgCdTe Epitaxial Films from InSb Substrates (3:00 PM - 3:15 PM)

  T.J. de Lyon, R.D. Rajavel, B.Z. Nosho, S. Terterian, M.L. Beliciu, P.R. Patterson, M.F. Boag-O'Brien
  HRL Laboratories, LLC, Malibu, CA, USA
  
  R.N. Jacobs, J.D. Benson
  U.S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Fort Belvoir, VA, USA
  

Student Paper Awards
Break Thursday / 3:15 PM - 3:45 PM

Session 14:
Devices III

Thursday / 3:45 PM - 6:15 PM

Chair:
Craig Hoffman, Naval Research Laboratory, Washington, DC

• 14.1 - Invited Paper: Rule 07' Revisited...Still a Good Heuristic Predictor of HgCdTe Performance? (3:45 PM - 4:15 PM)

  W. Tennant
  Teledyne Imaging Sensors, Camarillo, CA, USA
  

• 14.2 - Invited Paper: HgCdTe Research in Norway: IR Detectors and Nanotechnology (4:15 PM - 4:45 PM)

  R. Haakenaasen
  Norwegian Defence Research Establishment, Kjeller, Norway
  

• 14.3 - Comparative Study of MWIR and LWIR High Operating Temperature Non-Equilibrium Photovoltaic HgCdTe Devices (4:45 PM - 5:00 PM)

  S. Velicu, P. Dreiske, M. Carmody, C.H. Grein
  EPIR Technologies, Bolingbrook, IL, USA
  
  J. Philips, P. Emelie
  University of Michigan, Ann Arbor, MI, USA
  
  P. Wijewarnasuriya
  Army Research Laboratory, Adelphi, MD, USA
  

• 14.4 - HgCdTe Position Sensitive Detector Development (5:00 PM - 5:15 PM)

  E. P. G. Smith, E. J. Beuville, J. M. Peterson, M. Reddy, S. M. Johnson
  Raytheon Vision Systems, Goleta, CA
  
  R. Wolfshagen, B. Scott, M. Wilcox
  Oceanit Laboratories Inc., Waimea, HI
  
  G. M. Venzor
  Ratheon Vision Systems, Goleta, CA
  

• 14.5 - Photonic Crystal Enhancement of Light Emission from CdHgTe (5:15 PM - 5:30 PM)

  C. R. Tonheim, A. Sudbo, E. Selvig, R. Haakenaasen
  Norwegian Defence Research Establishment, Kjeller, Norway
  

• 14.6 - Molecular Beam Epitaxially-Grown HgCdTe-on-Siliicon for Space-Based X-Ray Calorimetry Applications (5:30 PM - 5:45 PM)

  P. Dreiske, C. H. Grein, M. Carmody, J. Zhao
  EPIR Technologies, Bolingbrook, IL, USA
  
  C.A. Kilbourne
  NASA Goddad Space Flight Center, USA
  
  R. Kelley
  NASA Goddard Space Flight Center, USA
  
  D. McCammon
  Dept. of Physics, Univesity of Wisconsin, WI, USA
  

• 14.7 - High Performance M/L Dual-Band 480×640 HgCdTe/Si FPAs (5:45 PM - 6:00 PM)

  E. A. Patten, P. M. Goetz, M. F. Vilela, K. Olsson, D. D. Lofgreen, J. G. Vodicka, S. M. Johnson
  Raytheon Vision Systems, Goleta, CA, USA
  

• 14.8 - HgTe Quantum Wells for Detection from IR up to Thz (6:00 PM - 6:15 PM)

  S. Dvoretsky, N. Mikhailov, Y. Sidorov, V. Shvets
  A.V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk, Russian Fed.
  
  S. Danilov, B. Wittmann, S. Ganichev
  Terahertz Center, University of Regensburg, Regensburg, Germany